イオンを利用する低消費電力スピントロニクス素子の開発に成功 ー 磁気メモリ素子やニューロモルフィックデバイスへの応用に期待 ー
土屋 敬志 主幹研究員（NIMS：公募A04）
【概要】
東京理科大学理学部応用物理学科の樋口透准教授、物質・材料研究機構の土屋敬志主幹研究員、寺部一弥MANA主任研究者らの研究グループは、電圧をかけて強磁性体に固体電解質内のリチウムイオンを挿入することで、スピン流注入による磁化回転よりも低い消費電力で磁化を回転できるスピントロニクス素子を開発しました。素子の構造が単純であるため高集積化に有利であり、磁化の向きで記憶するメモリ素子や脳内の神経回路網を模したニューロモルフィックデバイスへの発展が期待されます。
Abstract
An all-solid-state redox device, composed of magnetite (Fe3O4) thin film and Li+ conducting electrolyte thin film, was fabricated for the manipulation of a magnetization angle at room temperature (RT). This is a key technology for the creation of efficient spintronics devices, but has not yet been achieved at RT by other carrier doping methods. Variations in magnetization angle and magnetic stability were precisely tracked through the use of planar Hall measurements at RT. The magnetization angle was reversibly manipulated at 10° by maintaining magnetic stability. Meanwhile, the manipulatable angle reached 56°, although the manipulation became irreversible when the magnetic stability was reduced. This large manipulation of magnetic angle was achieved through tuning of the 3d electron number and modulation of the internal strain in the Fe3O4 due to the insertion of high-density Li+ (approximately 1021 cm–3). This RT manipulation is applicable to highly integrated spintronics devices due to its simple structure and low electric power consumption.
Wataru Namiki, Takashi Tsuchiya*, Makoto Takayanagi, Tohru Higuchi, Kazuya Terabe, ACS Nano 2, 6720-6731 (2020).
"Room Temperature Manipulation of Magnetization Angle, Achieved with an All-Solid-State Redox Device"
Published on November 2, 2020
東京理科大学プレスリリース
https://www.tus.ac.jp/today/archive/20201106_0402.html
