Solid-solid interfaces generate entirely new functions different from the intrinsic nature of each solid material. In this project, unique interfacial ion dynamics around the hetero/homo interfaces of solid state ionics materials (SSIM) are systematically investigated, and the goal is to establish design principles for fast ion transport and concentrated ion storage around interfaces, that is, “Interface Ionics”.
The “Interface IONCS” is closely related also to develop sustainable society. For example, “Interface IONICS” clarifies the issues of electrode/solid electrolyte interfaces in advanced energy storage devices such as all-solid-state batteries and all-solid-state capacitors, and provides clear guidelines of interface regulations for further improvements of the devices toward faster charge-discharge reactions and higher energy densities.
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Nagoya University, Yasutoshi IRIYAMA
Open International meeting 2019.09.24
Open Interface IONICS meeting 2019.09.17
There are two kinds of SSIM; i) insertion electrode material (electrode), where electrons or holes move faster than ions. ii) solid electrolyte, where ions moves faster than electrons or holes. When these two SSIMs are combined, an equilibrium state is formed through the rearrangement of all the charged carriers (electron, hole, and ion) and then their electrochemical potentials become equal. As a consequence, the electrode/solid electrolyte interface obtains different properties with each intrinsic SSIM due to space charge layer formation, mechanical relaxation (strain distribution), etc., which provide unique interfacial ion dynamics (Fig. 1). The aim of this project is to investigate these physical and chemical modulations around the interface in detail and establish the interface design principle which makes it possible to generate novel functions around the interfaces. This project integrates chemistry, physics, advanced measurement, theory and data science, and material science and consists of the four research groups (Fig. 2).
Gp-A01 fabricates model interfaces using single crystalline substrates, epitaxial thin films, etc. and investigates their interfacial ion dynamics. Gp-A02 analyzes modulation and distribution of voltage, ion concentration, chemical potential, local structure, etc. around the interface using advanced measurements. Gp-A03 clarifies ions and electrons distribution and their dynamics around the interface using multi-scale theoretical calculation and informatics analyses. Gp-A04 develops advanced materials especially focusing on metastable phases with lattice defects and lattice strains by combining crystalline and amorphous SSIMs.